A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

• high levels of disorder in the crystal. Up to this critical dose, it was shown that the valley polarization properties of the material were preserved (indicating that the electronic band structure of the semiconductor was largely unaffected). Only for high levels of disorder introduced into the system

Valley-selective directional emission from a transition-metal dichalcogenide monolayer mediated by a plasmonic nanoantenna

• Haitao Chen,
• Mingkai Liu,
• Lei Xu and
• Dragomir N. Neshev

Beilstein J. Nanotechnol. 2018, 9, 780–788, doi:10.3762/bjnano.9.71

• 10.3762/bjnano.9.71 Abstract Background: Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) with intrinsically crystal inversion-symmetry breaking have shown many advanced optical properties. In particular, the valley polarization in 2D TMDCs that can be addressed optically has inspired new

• [6][7][8][9][10]. In particular, monolayer TMDCs with direct bandgap at the K and K′ points [11] make it possible to control the valley degree freedom entirely optically. Optical pumping of excitons of a specific valley polarization has been demonstrated by polarization-resolved photoluminescence (PL

• weaker than for the azimuthal component because of contributions from higher order modes excited in the long bar. Since the valley polarization of the monolayer TMDCs (corresponding to the chirality of the point-dipole emitters) depends on the polarization states of the pumping laser, we could easily